Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1998-02-27
2000-07-18
Elms, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438152, 438272, M01L 2100, M01L 21336
Patent
active
060906472
ABSTRACT:
A semiconductor device comprises a substrate such as a semiconductor wafer having a major surface, a first conductive layer formed over the major surface, and a second conductive layer formed over the first conductive layer with the first and second conductive layers having a capacitance therebetween. A semiconductor layer is formed over the first and second conductive layer, the semiconductor layer having a diffusion region such as a transistor source, drain, and/or channel. An inventive method for forming the inventive structure comprises the steps of forming a first conductive layer over a substrate and forming a second conductive layer over the first conductive layer. Next, a semiconductor layer is formed over the second conductive layer and a transistor diffusion region, such as a source, drain, and/or channel is formed in the semiconductor layer.
REFERENCES:
patent: 4339723 (1982-07-01), Yee
patent: 4866507 (1989-09-01), jacobs et al.
patent: 4879631 (1989-11-01), Johnson et al.
patent: 5032892 (1991-07-01), Chern et al.
patent: 5091769 (1992-02-01), Eichelberger
patent: 5149662 (1992-09-01), Eichelberger
patent: 5155656 (1992-10-01), Narashimhan et al.
patent: 5266821 (1993-11-01), Chern et al.
patent: 5304506 (1994-04-01), Porter et al.
patent: 5329237 (1994-07-01), Horch
patent: 5376817 (1994-12-01), Seyyedy et al.
patent: 5485029 (1996-01-01), Crabbe et al.
patent: 5770476 (1998-06-01), Stone
Wolf, Stanley "Silicon Processing for the VLSI Era vol. 2: Process Integration", Lattice Press, pp. 381-392 and 498-500, 1990.
Technology Advances Electronic Design Oct. 13, 1995.
Elms Richard
Lebentritt Michael S.
Micro)n Technology, Inc.
LandOfFree
Capacitor for a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor for a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor for a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2035721