Capacitor for a semiconductor device

Details Capacitor for a semiconductor device Capacitor for a semiconductor device

1994-04-13

1995-05-30

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257311, 257316, 257344, 257408, 257532, 257535, 257640, H01L 2702, H01L 2968, H01L 2978

Patent

active

054204496

ABSTRACT:
A semiconductor device having a capacitor of a large capacitance in spite of its small area, is composed of a first insulating film formed on a semiconductor substrate, a first polysilicon film, a second insulating film and a second polysilicon film which are formed in that order on the first insulating film. The second polysilicon film is connected to the semiconductor substrate by means of a metal film to function as one electrode while the first polysilicon film functions as the other electrode. The first and second insulating film are each made of a dielectric material.

REFERENCES:
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4603059 (1986-07-01), Kiyosumi et al.
patent: 5126808 (1992-06-01), Montalvo et al.

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