Capacitor for a semiconductor

Details Capacitor for a semiconductor Capacitor for a semiconductor

1990-08-14

1992-01-07

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566591, 156662, 357 55, H01L 2702, H01L 2906, H01L 21306, B44C 122

Patent

active

050796151

ABSTRACT:
An improved capacitor for a semiconductor memory, and method for depositing material on a substrate is shown. The material to be deposited is energized by irradiation with light in a chamber in which a CVD method is carried out. The energy induced by the irradiation remains in the molecules of the material even after the molecules have lain on the substrate. With the residual energy, the molecules can wander on the substrate even to a hidden surface. Due to this wandering, the deposition can be performed also on the inside of a deep cave.

REFERENCES:
patent: 4017885 (1977-04-01), Kendall et al.
patent: 4580331 (1986-04-01), Soclof
patent: 4735821 (1988-01-01), Yanazaki et al.
patent: 4861622 (1989-07-01), Yamazaki et al.

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