Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-26
1994-02-15
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257311, 257370, 257379, 257385, 257532, 257535, 437191, 437228, 437233, 437915, 437919, H01L 2702, H01L 2144
Patent
active
052869911
ABSTRACT:
The invention provides an improved BiCMOS device and a method of fabricating such a BiCMOS device which requires fewer process steps than known fabrication methods. In one embodiment, the invention provides a method of forming an interpoly capacitor in a BiCMOS device which maintains the thickness of the interpoly dielectric in the capacitor while a window is etched for the emitter in a bipolar transistor. The method includes the use of a thin polysilicon layer overlying the oxide layer, which protects the oxide from etching while the emitter window is etched.
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Hui Chihung (John)
Szeto Roger
Pioneer Semiconductor Corporation
Wojciechowicz Edward
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