Capacitor element and semiconductor device

Details Capacitor element and semiconductor device Capacitor element and semiconductor device

2011-05-10

2011-05-10

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27016

Reexamination Certificate

active

07939873

ABSTRACT:
An object of the present invention is that the capacitance of MOS capacitors is changed without varying the kind of an impurity (a donor or an acceptor) in a channel formation region, and an n-type MOS capacitor and a p-type MOS capacitor are formed over a same substrate. By changing the offset length between a contact region and a channel formation region, the capacitance of a MOS capacitor can be changed without increasing the number of manufacturing process. Also, an n-type MOS capacitor and a p-type MOS capacitor can be formed over a same substrate only by changing the offset length. In addition, an n-type MOS capacitor and a p-type MOS capacitor can be formed over a same substrate by changing the dose amount of impurity with respect to a channel formation region while fixing the offset length.

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