Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-14
2008-09-02
Hu, Shouxiang (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S301000, C257S310000, C257S311000
Reexamination Certificate
active
07420237
ABSTRACT:
A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.
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Mikawa Takumi
Nagano Yoshihisa
Hu Shouxiang
Matsushita Electric - Industrial Co., Ltd.
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