Capacitor element

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S301000, C257S310000, C257S311000

Reexamination Certificate

active

11035175

ABSTRACT:
A capacitor element is provided which is composed of a lower electrode, an upper electrode formed in opposing relation to the lower electrode, and a capacitor dielectric film made of a ferroelectric material or a high dielectric material and formed between the lower and upper electrodes. The lower electrode, the capacitor dielectric film, and the upper electrode are formed in a region extending at least from within a hole provided in an interlayer insulating film having a first hydrogen barrier film disposed on the upper surface thereof toward a position above the hole. A second hydrogen barrier film in contact with the first hydrogen barrier film is disposed to cover the upper surface of the upper electrode and the side surface of the portion of the upper electrode which has been formed above the hole.

REFERENCES:
patent: 5498562 (1996-03-01), Dennison et al.
patent: 6380579 (2002-04-01), Nam et al.
patent: 6395612 (2002-05-01), Amanuma
patent: 6559003 (2003-05-01), Hartner et al.
patent: 6686620 (2004-02-01), An et al.
patent: 6984861 (2006-01-01), Yamada et al.
patent: 2002/0056864 (2002-05-01), Agarwal
patent: 2003/0183936 (2003-10-01), Ito et al.
patent: 11-135736 (1999-05-01), None
patent: 2000-286254 (2000-10-01), None
patent: 2001-007303 (2001-01-01), None
patent: 2003-086771 (2003-03-01), None

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