Capacitor, electrode structure, and semiconductor memory device

Details Capacitor, electrode structure, and semiconductor memory device Capacitor, electrode structure, and semiconductor memory device

1994-05-16

1996-04-16

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 257295, 257296, G11C 1122

Patent

active

055089534

ABSTRACT:
A capacitor and electrode structure comprising a PZT ferroelectric layer 17 with a primary component (Pb) and secondary component (Ti), a lower electrode layer 16 formed on the underside of the ferroelectric layer and made up of a special element (Pt) and Ti, and compounds thereof, and a diffusion barrier layer 18 which is formed on the underside of the lower electrode layer and which functions as a diffusion barrier with respect to Pb. The capacitor and the electrode structure, which may be a component of a semiconductor memory device, suppress fluctuations in the composition of the ferroelectric layer in PZT, etc., so as to maintain the intended performance of the PZT ferroelectric layer, thereby simplifying and stabilizing film fabrication, and preventing the degradation of electrical characteristics and adverse effects on lower layers.

REFERENCES:
patent: 5005102 (1991-04-01), Larson
patent: 5046043 (1991-09-01), Miller et al.
patent: 5335138 (1994-08-01), Sandhu et al.

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