Capacitor, electrode or wiring structure, and semi conductor dev

Details Capacitor, electrode or wiring structure, and semi conductor dev Capacitor, electrode or wiring structure, and semi conductor dev

1996-10-01

1997-08-05

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257294, 257297, 257754, 257762, 257763, 257764, 257766, 257758, 257295, H01L 2978, H01L 2348, H01L 2702, H01L 2968

Patent

active

056545673

ABSTRACT:
A capacitor, electrode, or wiring structure having an alpha ray emitting source (in particular, a Pt electrode), and an alpha ray shielding layer 18, having at least one type selected from the group of simple metals of nickel, cobalt, copper, and tungsten, their compounds or alloys made of at least two types of these simple metals, and compounds and alloys made of these simple metals and silicon is provided. It is possible to shield off the alpha ray effectively, to suppress generation of soft errors, to enable the use of Pt and other new materials in making the electrodes and wiring, and to reduce the cost of the mold resin.

REFERENCES:
patent: 4644386 (1987-02-01), Nishizawa et al.
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patent: 5187638 (1993-02-01), Sandhu et al.
patent: 5191510 (1993-03-01), Huffman
patent: 5216572 (1993-06-01), Larson et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5434742 (1995-07-01), Saito et al.
patent: 5436477 (1995-07-01), Hashizume et al.
patent: 5440173 (1995-08-01), Evans, Jr. et al.

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