Capacitor electrode, method for manufacturing the same, and...

Details Capacitor electrode, method for manufacturing the same, and... Capacitor electrode, method for manufacturing the same, and...

2009-02-25

2010-12-07

Cao, Phat X (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257SE27016

Reexamination Certificate

active

07847328

ABSTRACT:
A capacitor electrode is composed of an SrRuO3film including first and second surfaces opposed to each other. The capacitor electrode contains a 10 atom % or less trivalent element in a region ranging from a position a predetermined distance away from the first surface in the thickness direction thereof up to the second surface side.

REFERENCES:
patent: 2002/0151162 (2002-10-01), Beitel et al.
patent: 2003/0047771 (2003-03-01), Kweon et al.
Chu, C.M. et al., “Cylindrical Ru/SrTiO3/Ru Capacitor Technology for 0.11um Generation DRAMs,” 2001 Symposium on VLSI Technology Digest of Technical Papers.
Sim, Joon Seop et al., “Characteristics of Polycrystalline SrRuO3 Thin-Film Bottom Electrodes for Metallorganic Chemical-Vapor-Deposited Pb(Zr0.2Ti0.8)O3 Thin Films,” Journal of the Electrochemical Society vol. 153, No. 11 p. 777-786, 2006.

Affiliated with

Also associated with

Rating

Capacitor electrode, method for manufacturing the same, and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor electrode, method for manufacturing the same, and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor electrode, method for manufacturing the same, and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4185164