Capacitor device providing sufficient reliability

Details Capacitor device providing sufficient reliability Capacitor device providing sufficient reliability

2008-02-25

2011-12-13

Le, Thao (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29164, C438S003000

Reexamination Certificate

active

08076705

ABSTRACT:
A capacitor device includes a dielectric layer configured to have a composition represented as (Ba1−x, Srx)Ti1−zScyO3+δ(0<x<1, 0.01<z<0.3, 0.005<y<0.02, −0.5<δ<0.5) and an in-plane deformation ∈ of crystal that satisfies −0.4<∈<0.4, an upper electrode and a lower electrode that are placed on respective sides of the dielectric layer, and a substrate on which the upper electrode, the lower electrode, and the dielectric layer are disposed.

REFERENCES:
patent: 4990324 (1991-02-01), Tomita et al.
patent: 2005/0145908 (2005-07-01), Moise et al.
patent: 8-18867 (1996-02-01), None
“Proton conducting alkaline earth zirconates and titanates for high drain electrochemical applications”, Kreuer et al., Solid State Ionics (2001), 145(1-4), 295-306.
Liu et al., “Structure dielectric property relationship for vanadium and scandium doped barium strontium titanate”, Acta Materialia (2007) 2647-2657.

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