Capacitor device and method for manufacturing the same

Details Capacitor device and method for manufacturing the same Capacitor device and method for manufacturing the same

2011-06-14

2011-06-14

Tran, Minh-Loan T (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S308000, C257S532000, C257S534000, C257SE27034, C257SE27048, C257SE29346, C257SE23057

Reexamination Certificate

active

07960773

ABSTRACT:
This invention provides a capacitor device with a high dielectric constant material and multiple vertical electrode plates. The capacitor devices can be directly fabricated on a wafer with low temperature processes so as to be integrated with active devices formed on the wafer. This invention also forms vertical conducting lines in the capacitor devices using the through-silicon-via technology to facilitate the three-dimensional stacking of the capacitor devices.

REFERENCES:
patent: 4409608 (1983-10-01), Yoder
patent: 5150276 (1992-09-01), Gonzalez et al.
patent: 5393373 (1995-02-01), Jun et al.
patent: 6552383 (2003-04-01), Ahn et al.
patent: 6740922 (2004-05-01), Jones et al.
patent: 6812109 (2004-11-01), Ahn et al.
patent: 2001/0020725 (2001-09-01), Okuno et al.

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