Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2007-09-21
2008-08-19
Parker, Kenneth (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S303000, C257S309000, C257S311000, C257S317000, C438S255000, C438S396000, C438S669000, C438S964000
Reexamination Certificate
active
07414297
ABSTRACT:
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.
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Basceri Cem
Graettinger Thomas M.
Pontoh Marsela
Micro)n Technology, Inc.
Nguyen Joseph
Parker Kenneth
Wells St. John P.S.
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