Capacitor constructions

Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S303000, C257S309000, C257S311000, C257S317000, C438S255000, C438S396000, C438S669000, C438S964000

Reexamination Certificate

active

07414297

ABSTRACT:
The invention includes methods of forming rugged electrically conductive surfaces. In one method, a layer is formed across a substrate and subsequently at least partially dissociated to form gaps extending to the substrate. An electrically conductive surface is formed to extend across the at least partially dissociated layer and within the gaps. The electrically conductive surface has a rugged topography imparted by the at least partially dissociated layer and the gaps. The topographically rugged surface can be incorporated into capacitor constructions. The capacitor constructions can be incorporated into DRAM cells, and such DRAM cells can be incorporated into electrical systems.

REFERENCES:
patent: 5700710 (1997-12-01), Zenke
patent: 6103570 (2000-08-01), Sandhu et al.
patent: 6236080 (2001-05-01), Lou
patent: 6524927 (2003-02-01), Sugawara et al.
patent: 6723613 (2004-04-01), Huang
patent: 6753618 (2004-06-01), Basceri et al.
patent: 6815753 (2004-11-01), Sandhu
patent: 7274059 (2007-09-01), Pontoh et al.
patent: 2001/0012656 (2001-08-01), Rhodes et al.
patent: 2002/0043681 (2002-04-01), Tsu et al.
patent: 2003/0129807 (2003-07-01), Ping et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Capacitor constructions does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor constructions, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor constructions will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4000582

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.