Capacitor constructions

Details Capacitor constructions Capacitor constructions

2006-10-24

2006-10-24

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S301000, C257S306000, C257S310000, C257SE27085, C257SE27094, C257SE29139, C438S508000, C438S508000

Reexamination Certificate

active

07126181

ABSTRACT:
The invention includes methods of forming circuit devices. A metal-containing material comprising a thickness of no more than 20 Å (or alternatively comprising a thickness resulting from no more than 70 ALD cycles) is formed between conductively-doped silicon and a dielectric layer. The conductively-doped silicon can be n-type silicon and the dielectric layer can be a high-k dielectric material. The metal-containing material can be formed directly on the dielectric layer, and the conductively-doped silicon can be formed directly on the metal-containing material. The circuit device can be a capacitor construction or a transistor construction. If the circuit device is a transistor construction, such can be incorporated into a CMOS assembly. Various devices of the present invention can be incorporated into memory constructions, and can be incorporated into electronic systems.

REFERENCES:
patent: 5705428 (1998-01-01), Liu et al.
patent: 6214724 (2001-04-01), Nakajima
patent: 6228702 (2001-05-01), Hirota
patent: 6255698 (2001-07-01), Gardner et al.
patent: 6277702 (2001-08-01), Chun et al.
patent: 6297539 (2001-10-01), Ma et al.
patent: 6306743 (2001-10-01), Lee
patent: 6319832 (2001-11-01), Uhlenbrock et al.
patent: 6436749 (2002-08-01), Tonti et al.
patent: 6573160 (2003-06-01), Taylor et al.
patent: 6600212 (2003-07-01), Takayanagi et al.
patent: 6617210 (2003-09-01), Chau et al.
patent: 6693333 (2004-02-01), Yu
patent: 6740901 (2004-05-01), Miki et al.
patent: 6794232 (2004-09-01), Zheng et al.
patent: 2001/0024387 (2001-09-01), Raaljmakers et al.
patent: 2001/0052618 (2001-12-01), Hasegawa
patent: 2002/0014649 (2002-02-01), Kunikiyo
patent: 2002/0024080 (2002-02-01), Derdenan et al.
patent: 2002/0053711 (2002-05-01), Chau et al.
patent: 2002/0086507 (2002-07-01), Park et al.
patent: 2002/0153573 (2002-10-01), Mogami
patent: 2003/0129793 (2003-07-01), Chau et al.
patent: 2003/0199139 (2003-10-01), Lee
patent: 2003/0207528 (2003-11-01), Li
patent: 2004/0038538 (2004-02-01), Ho et al.
patent: 2004/0065903 (2004-04-01), Zheng et al.
patent: 2005/0064653 (2005-03-01), Park et al.
patent: 2005/0104112 (2005-05-01), Haukka et al.
patent: 2005/0269618 (2005-12-01), Shin et al.
patent: 10 303412 (1998-11-01), None
patent: 2001 339061 (2001-12-01), None
patent: 2003 023152 (2003-01-01), None
2004/006584, Mar. 2004, PCT Search Report.

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