Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-05-23
1999-11-02
Arroyo, Teresa M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257300, 257309, 257532, H01L 2710, H01L 2704, H01L 2978
Patent
active
059775823
ABSTRACT:
A dielectric layer consisting essentially of Ta, Al, oxygen and nitrogen can have advantageous properties that make such a layer useful for thin film capacitors, typically capacitors for Si integrated circuits. For instance, a significantly greater fraction of capacitors according to the invention than of prior art tantalum oxide capacitors can store a charge of 3 .mu.coulomb/cm.sup.2. In a currently preferred embodiment, the dielectric layer has composition Ta.sub.1-y Al.sub.y O.sub.x N.sub.z, with y.about.0.1, x.about.2.4, and z.about.0.02. The dielectric layer can be formed by sputter deposition or any other appropriate deposition technique, e.g., chemical vapor deposition.
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Fleming Robert McLemore
Schneemeyer Lynn Frances
van Dover Robert Bruce
Arroyo Teresa M.
Guerrero Maria
Lucent Technologies - Inc.
Pacher Eugen E.
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