Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-12-14
1999-09-28
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257306, H01L 27108
Patent
active
059593270
ABSTRACT:
The invention is a storage cell capacitor and a method for forming the storage cell capacitor having a storage node electrode comprising a barrier layer interposed between a conductive plug and an oxidation resistant layer. A layer of titanium silicide is fabricated to lie between the conductive plug and the oxidation resistant layer. A thick insulative layer protects the sidewalls of the barrier layer during the deposition and anneal of a dielectric layer having a high dielectric constant. The method comprises forming the conductive plug in a thick layer of insulative material such as oxide or oxide
itride. The conductive plug is recessed from a planarized top surface of the thick insulative layer. Titanium is deposited and a rapid thermal anneal is performed. The titanium reacts with silicide of the conductive plug to form TiSi at the bottom of the recess. Unreacted Ti is removed. The barrier layer is then formed in the recess. The process is continued with a formation of an oxidation resistant conductive layer and the patterning thereof to complete the formation of the storage node electrode. Next a dielectric layer having a high dielectric constant is formed to overly the storage node electrode and a cell plate electrode is fabricated to overly the dielectric layer.
REFERENCES:
patent: 4782309 (1988-11-01), Benjaminson
patent: 4903110 (1990-02-01), Aono
patent: 4910578 (1990-03-01), Okamoto
patent: 4982309 (1991-01-01), Sheperd
patent: 5005102 (1991-04-01), Larson
patent: 5049975 (1991-09-01), Ajika et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5053917 (1991-10-01), Miyasaka et al.
patent: 5098860 (1992-03-01), Chakravorty et al.
patent: 5099305 (1992-03-01), Takenaka
patent: 5134451 (1992-07-01), Katoh
patent: 5162248 (1992-11-01), Dennison et al.
patent: 5168073 (1992-12-01), Gonzalez et al.
patent: 5189503 (1993-02-01), Suguro et al.
patent: 5293510 (1994-03-01), Takenaka
patent: 5335138 (1994-08-01), Sandhu et al.
patent: 5340765 (1994-08-01), Dennison et al.
patent: 5381302 (1995-01-01), Sandhu et al.
patent: 5387532 (1995-02-01), Hamamoto et al.
patent: 5391511 (1995-02-01), Doan et al.
patent: 5392189 (1995-02-01), Fazan et al.
patent: 5396094 (1995-03-01), Matsuo
patent: 5401680 (1995-03-01), Abt et al.
patent: 5506166 (1996-04-01), Sandhu et al.
patent: 5631804 (1997-05-01), New
Kaga T., "Crown-Shaped Stacked Cap . . . DRAMS", IEEE Transactions on Electron Devices V-2 38, No. 2, 1991, (1990).
A Stacked Capacitor with (BaxSrl-x) TiO3 for 256M DRAM Koyama et al PG 32.1.1-32.1.4.
"ULSI DRAM Technology with Ba0.7Sr0.3Tio3 Film of 1.3nm Equivelent SiO2 Thickness and 10-9A/CM2 Leakage Current" by E. Fujii et al 1992 IEEE IEDM 92-267.
"Silicon Processing for the VLSI Era" by Wolf, vol. II--Process Integration, pp. 608-614, Jun. 1990.
Fazan Pierre C.
Sandhu Gurtej S.
Micro)n Technology, Inc.
Munson Gene M.
LandOfFree
Capacitor compatible with high dielectric constant materials hav does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor compatible with high dielectric constant materials hav, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor compatible with high dielectric constant materials hav will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-706438