Capacitor arrangement with capacitors arranged one in the other

Details Capacitor arrangement with capacitors arranged one in the other Capacitor arrangement with capacitors arranged one in the other

2006-11-21

2006-11-21

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27092, C257SE27084

Reexamination Certificate

active

07138677

ABSTRACT:
Arrangement of capacitors which, without taking up an additional area in the semiconductor substrate, have an increased capacitance compared with conventional capacitors in DRAM memory cells. The arrangement of capacitors according to the invention is based on a combination of two or more separately arranged individual capacitors in or on a substrate to form two or more capacitors arranged one in the other or one above the other. In this case, an outer capacitor encloses at least one or a plurality of inner. capacitors or a substantial part of an upper capacitor lies above a lower capacitor. A method for fabricating the arrangement of capacitors also is described.

REFERENCES:
patent: 3793475 (1974-02-01), Yonkers
patent: 5354701 (1994-10-01), Chao
patent: 5444599 (1995-08-01), Dupraz et al.
patent: 5874757 (1999-02-01), Chao
patent: 5950084 (1999-09-01), Chao
patent: 6117790 (2000-09-01), Schäfer et al.
patent: 2002/0030218 (2002-03-01), Adkisson et al.

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