Capacitor arrangement in a semiconductor component and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE29343, C363S059000, C363S060000, C363S062000

Reexamination Certificate

active

07626222

ABSTRACT:
A semiconductor device includes a first capacitor node, a second capacitor node, a first capacitor electrode, a second capacitor electrode, a first switch and a second switch. The first switch is coupled between the first capacitor electrode and the first and second capacitor nodes such that the first switch has a first position that couples the first capacitor electrode to the first capacitor node and a second position that couples the first capacitor electrode to the second capacitor node. The second switch is coupled between the second capacitor electrode and the first and second capacitor nodes such that the second switch has a first position that couples the second capacitor electrode to the first capacitor node and a second position that couples the second capacitor electrode to the second capacitor node.

REFERENCES:
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patent: 5270913 (1993-12-01), Limpaecher
patent: 5274586 (1993-12-01), Matsukawa
patent: 5461557 (1995-10-01), Tamagawa
patent: 5668710 (1997-09-01), Caliboso et al.
patent: 5734291 (1998-03-01), Tasdighi et al.
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patent: 7453711 (2008-11-01), Yanagida et al.
patent: 2001/0015449 (2001-08-01), Niguyen et al.
patent: 2003/0057987 (2003-03-01), Ohlhoff et al.
patent: 200 13 501 (2001-01-01), None
patent: 101 45 021 (2003-04-01), None

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