Capacitor/antifuse structure having a barrier-layer electrode an

Details Capacitor/antifuse structure having a barrier-layer electrode an Capacitor/antifuse structure having a barrier-layer electrode an

1999-03-01

1999-10-19

Nelms, David

Static information storage and retrieval

Systems using particular element

Capacitors

G11C 1124

Patent

active

059699833

ABSTRACT:
A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.

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patent: 5567647 (1996-10-01), Takahashi
patent: 5877978 (1999-03-01), Morishita et al.
P.M. Smith and J.S. Custer, "Chemical Vapor Deposition of Titanium-Silicon-Nitride-Films," Applied Physics Letter 70(23):3116-3118, Jun. 1997.

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