Capacitor and semiconductor device including the same

Details Capacitor and semiconductor device including the same Capacitor and semiconductor device including the same

2011-06-07

2011-06-07

Luu, Chuong A. (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S300000, C257S303000, C257S306000

Reexamination Certificate

active

07956440

ABSTRACT:
A capacitor includes a first capacitor structure on a substrate, the first capacitor structure including a first electrode, a first dielectric layer pattern, and a second electrode, a second capacitor structure on the first capacitor structure, the second capacitor structure including a third electrode, a second dielectric layer pattern, and a fourth electrode, at least one first contact pad on a side of the first electrode, and a wiring structure connecting the at least one first contact pad and the fourth electrode.

REFERENCES:
patent: 6337267 (2002-01-01), Yang
patent: 6566698 (2003-05-01), Nishihara et al.
patent: 10-2002-0081798 (2002-10-01), None
patent: 10-2002-0083577 (2002-11-01), None
patent: 10-2006-0078259 (2006-07-01), None

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