Capacitor and process for manufacturing the same

Details Capacitor and process for manufacturing the same Capacitor and process for manufacturing the same

2006-10-24

2010-02-23

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE27089, C438S398000

Reexamination Certificate

active

07667257

ABSTRACT:
Method for solving the problem caused when forming a crown-structure capacitor in a trench which is formed in an insulating film, and having difficulty in electrical by connecting a first upper electrode formed on the inside wall of the trench and a second upper electrode which is to be a plate because of the intervention of dielectric between the first and second upper electrodes. The conducting state of the first upper electrode and the plate upper electrode is ensured by utilizing a tantalum oxide film formed on a titanium nitride film, which is brought to a completely conducting state when heat treated. A crown structure is formed without removing the insulating film, in which a trench has been formed, by wet etching, whereby a stacked trench capacitor, which has double the capacity is provided while eliminating the collapse of the lower electrode or pair bit defect.

REFERENCES:
patent: 2004/0227175 (2004-11-01), Iijima et al.
patent: 2004/0248362 (2004-12-01), Nakamura et al.
patent: 2006/0234510 (2006-10-01), Iijima
patent: 10-173148 (1998-06-01), None

Affiliated with

Also associated with

Rating

Capacitor and process for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Capacitor and process for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor and process for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4183082