Capacitor and method of manufacturing the same

Details Capacitor and method of manufacturing the same Capacitor and method of manufacturing the same

2008-12-27

2011-12-27

Fahmy, Wael (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C257S516000, C257SE29343, C257SE27034

Reexamination Certificate

active

08084803

ABSTRACT:
A capacitor with a mixed structure of a Metal Oxide Semiconductor (MOS) capacitor and a Poly-silicon Insulator Poly-silicon (PIP) capacitor includes a substrate and a diffusion junction region formed over the substrate. A high concentration diffusion junction region may be formed in a portion of the diffusion junction region. An oxide layer may be formed over the substrate, the oxide layer having an opening that exposes a portion of the high concentration diffusion junction region. A first polysilicon plate may be formed over a portion of the oxide layer and spaced from the opening, and a nitride layer may be formed over a portion of the first polysilicon plate. A sidewall may be formed over a side of the first polysilicon layer, over a side of the nitride layer, and over a portion of the oxide layer between the side of the polysilicon layer and the opening. A second polysilicon plate may be formed over the nitride layer, over the sidewall, and over the high concentration diffusion junction region.

REFERENCES:
patent: 6777732 (2004-08-01), Prall et al.

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