Capacitor and method of manufacturing a capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S301000, C257S303000

Reexamination Certificate

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10370535

ABSTRACT:
Semiconductor devices having capacitors formed of a high-k dielectric and a pair of interconnections on either side of the dielectric are provided along with methods of fabricating such semiconductor devices. The interconnections comprise a via and a metal layer.

REFERENCES:
patent: 4891684 (1990-01-01), Nishioka et al.
patent: 5780334 (1998-07-01), Lim et al.
patent: 5949098 (1999-09-01), Mori
patent: 6117747 (2000-09-01), Shao et al.
patent: 6124198 (2000-09-01), Moslehi
patent: 6255186 (2001-07-01), Al-Shareef et al.
patent: 6346741 (2002-02-01), Van Buskirk et al.
patent: 6348373 (2002-02-01), Ma et al.
patent: 6410955 (2002-06-01), Baker et al.
patent: 6524926 (2003-02-01), Allman et al.
patent: 6531730 (2003-03-01), Sandhu et al.
patent: 6730974 (2004-05-01), Karasawa et al.
patent: 6735726 (2004-05-01), Muranaka et al.
patent: 6740922 (2004-05-01), Jones et al.
patent: 6747307 (2004-06-01), Vathulya et al.
patent: 6822312 (2004-11-01), Sowlati et al.
patent: 2002/0017673 (2002-02-01), Maeda et al.
patent: 2002/0072189 (2002-06-01), Haroun et al.
patent: 1 109 227 (2001-06-01), None
patent: 1 139 405 (2001-10-01), None
patent: 9-36252 (1997-02-01), None
Peter Singer, “Dual Damascene Challenges Dielectric Etch,” Semiconductor International, Aug. 1, 1999, pp. 1-4.
Applied Materials Technical Training Manual, “DCVD Process: Optimization & Troubleshooting,” Jun. 6, 2000, pp. 4.5, 4.11.

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