Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-03-27
1993-04-27
Griffin, Donald A.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
437 52, 257 77, 257308, H01G 406, H01L 2170
Patent
active
052067874
ABSTRACT:
A stacked capacitor having a fin structure, and a method of fabrication. A first electrode with a fin structure is formed on a semiconductor substrate and a second electrode is formed over the first electrode and spaced therefrom by a dielectric film. The first electrode comprises an electrically conductive material, different from polycrystalline silicon, and a polycrystalline silicon film containing an impurity and covering the electrically conductive material. Thereby, the film thickness of the storage electrode of the fin capacitor is reduced and the corrugation of the surface of a memory device by the capacitor structure is mitigated.
REFERENCES:
patent: 5006481 (1991-04-01), Chan et al.
patent: 5053351 (1991-10-01), Fazan et al.
patent: 5071781 (1991-12-01), Seo et al.
patent: 5082806 (1992-01-01), Dulin
Patent Abstracts of Japan, vol. 9, No. 31 (E-295)(1754) Feb. 9, 1985 & JP-A-59 175153 (Nippon Denki K. K.)) Oct. 3, 1984.
Patent Abstracts of Japan, vol. 13, No. 46 (E-711)(3394) Feb. 2, 1989 & JP-A-63 240057 (Fujitsu Ltd) Oct. 5, 1988.
Patent Abstracts of Japan, vol. 13, No. 359 (E-804)(3707) Aug. 10, 1989 & JP-A-1 120050 (Hitachi Ltd) May 12, 1989.
Patent Abstracts of Japan, vol. 14, No. 51 (E-881) Jan. 30, 1990 & JP-A-1 278061 (Fujitsu Ltd) Nov. 8, 1989.
Patent Abstracts of Japan, vol. 14, No. 194 (E-919)(4137) Apr. 20, 1990 & JP-A-2 040949 (Sony Corp) Feb. 9, 1990.
Patent Abstracts of Japan, vol. 14, No. 255 (E-935)(4198) May 31, 1990 & JP-A-2 076258 (Fujitsu Ltd) Mar. 15, 1990.
Patent Abstracts of Japan, vol. 15, No. 22 (E-1024) Jan. 18, 1991 & JP-A-2 267962 (Nec Corp) Nov. 1, 1990.
Fujitsu Limited
Griffin Donald A.
LandOfFree
Capacitor and method of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Capacitor and method of fabricating same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Capacitor and method of fabricating same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2332590