Capacitor and method for fabricating the same, and...

Details Capacitor and method for fabricating the same, and... Capacitor and method for fabricating the same, and...

2007-02-20

2007-02-20

Menz, Doug (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000

Reexamination Certificate

active

10849791

ABSTRACT:
The capacitor according to the present invention comprises a lower electrode18formed on a base substrate14, a dielectric film20formed on the lower electrode18, and an upper electrode28formed on the dielectric film20and including a polycrystalline conduction film22, and a amorphous conduction film24formed on the polycrystalline conduction film22. Because of the amorphous conduction film24included in the upper electrode28, which can shut off hydrogen and water, hydrogen and water can be prohibited from arriving at the dielectric film20. Accordingly, the dielectric film20of an oxide is prevented from being reduced with hydrogen, and the capacitor can have good electric characteristics.

REFERENCES:
patent: 5585300 (1996-12-01), Summerfelt
patent: 5798903 (1998-08-01), Dhote et al.
patent: 2002/0117700 (2002-08-01), Fox
patent: 8-116032 (1996-05-01), None
patent: 2000-509200 (2000-07-01), None

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