Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-12-13
2005-12-13
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S311000
Reexamination Certificate
active
06974985
ABSTRACT:
The semiconductor device comprises: a memory cell transistor formed on a semiconductor substrate10; insulation films22, 30covering the memory cell transistor; a buffer structure40formed on the insulation film; and a capacitor including a lower electrode42formed on the buffer structure40and electrically connected to the source/drain diffused layer20; a capacitor dielectric film44formed on the lower electrode42, and formed of a perovskite ferroelectric material having a smaller thermal expansion coefficient than that of the buffer structure40and having a crystal oriented substantially perpendicular to a surface of the lower electrode42. The buffer structure for mitigating the influence of the stress from the substrate is formed below the lower electrode, whereby a polarization direction of the capacitor dielectric film can be made parallel with a direction of an electric field applied between the upper electrode and the lower electrode. An intrinsic polarization of the ferroelectric film can be utilized as it is.
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Kurasawa Masaki
Kurihara Kazuaki
Maruyama Kenji
Fujitsu Limited
Le Thao X.
Pham Long
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