Capacitor and its manufacturing method, ferroelectric memory...

Details Capacitor and its manufacturing method, ferroelectric memory... Capacitor and its manufacturing method, ferroelectric memory...

2006-09-13

2008-05-06

Quach, T. N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S306000, C257SE21272, C257SE27084, C257SE27104, C438S239000, C438S396000

Reexamination Certificate

active

07368774

ABSTRACT:
A capacitor includes a lower electrode, a first dielectric film composed of lead zirconate titanate niobate formed above the lower electrode, a second dielectric film composed of lead zirconate titanate or lead zirconate titanate niobate with a Nb composition smaller than a Nb composition of the lead zirconate titanate niobate composing the first dielectric film, and an upper electrode formed above the second dielectric film.

REFERENCES:
patent: 6232133 (2001-05-01), Kim et al.
patent: 6605477 (2003-08-01), Uchiyama
patent: 6855973 (2005-02-01), Otabe et al.
patent: 7037731 (2006-05-01), Kijima et al.
patent: 2005/0151177 (2005-07-01), Miyazawa et al.
patent: 10-223847 (1998-08-01), None

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