Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-05-09
2006-05-09
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S306000, C257S310000, C257S311000, C257SE21011
Reexamination Certificate
active
07042034
ABSTRACT:
The disclosure provides a capacitor including a lower electrode, a surface of which can be formed of Pt, and an inner part of which can be formed of metal having good antioxidant properties. The inner part of the lower electrode can be formed by depositing Ru or Ir with an electro plating process. It is possible to improve the leakage current characteristics by forming the surface of the lower electrode with Pt. Also it is possible to perform a thermal treatment at a high temperature in an oxygen atmosphere, because the inner part of the lower electrode resists or prevents diffusion of oxygen, so that a high dielectric layer can be obtained.
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Notice of Preliminary Rejection issued from the Korean Intellectual Property Office in counterpart Application No. 2001-56136, and English-language translation thereof (May 27, 2003).
Hynix / Semiconductor Inc.
Smith Zandra V.
Thomas Toniae M.
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