Capacitive techniques to reduce noise in high speed...

Active solid-state devices (e.g. – transistors – solid-state diode – Superconductive contact or lead – Transmission line or shielded

Reexamination Certificate

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C257S531000, C257S532000, C257S535000, C257S758000, C257S664000, C257S637000, C257SE21160, C257SE21019, C257SE23018, C257SE23019

Reexamination Certificate

active

07737536

ABSTRACT:
Structures, in various embodiments, are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. In an embodiment, a transmission line is disposed on a first layer of insulating material, where the first layer of insulating has a thickness equal to or less than 1.0 micrometer. The transmission line may be structured with a thickness and a width of approximately 1.0 micrometers. A second layer of insulating material is disposed on the transmission line.

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