Capacitive techniques to reduce noise in high speed...

Details Capacitive techniques to reduce noise in high speed... Capacitive techniques to reduce noise in high speed...

2004-08-31

2009-10-13

Monbleau, Davienne (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

Superconductive contact or lead

Transmission line or shielded

C257S664000, C257SE21016

Reexamination Certificate

active

07602049

ABSTRACT:
Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. Embodiments of an electronic device having a transmission line circuit include a first layer of electrically conductive material on a substrate and a first layer of insulating material on the first layer of the electrically conductive material. The first layer of insulating material has a thickness of less than 1.0 micrometers (μm). A transmission line is formed on the first layer of insulating material and a second layer of insulating material is formed on the transmission line. A second layer of electrically conductive material is formed on the second layer of insulating material.

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