Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having air-gap dielectric
Reexamination Certificate
2006-09-05
2006-09-05
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having air-gap dielectric
C438S430000, C438S454000, C438S694000
Reexamination Certificate
active
07101770
ABSTRACT:
Improved methods and structures are provided using capacitive techniques to reduce noise in high speed interconnections, such as in CMOS integrated circuits. The present invention offers an improved signal to noise ration. The present invention provides for the fabrication of improved transmission lines for silicon-based integrated circuits using conventional CMOS fabrication techniques. Embodiments of a method for forming transmission lines in an integrated circuit include forming a first layer of electrically conductive material on a substrate. The method includes forming a first layer of insulating material on the first layer of the electrically conductive material. The first layer has a thickness of less than 1.0 micrometers (μm). A transmission line is formed on the first layer of insulating material. The transmission line has a thickness and a width of approximately 1.0 micrometers. A second layer of insulating material is formed on the transmission line. And, a second layer of electrically conductive material is formed on the second layer of insulating material.
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Lebentritt Michael
Micro)n Technology, Inc.
Schwegman Lundberg Woessner & Kluth P.A.
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