Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2006-03-30
2009-06-09
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C367S163000, C367S181000, C310S324000, C073S718000
Reexamination Certificate
active
07545012
ABSTRACT:
A capacitive micromachined ultrasound transducer (cMUT) cell is presented. The cMUT cell includes a lower electrode. Furthermore, the cMUT cell includes a diaphragm disposed adjacent to the lower electrode such that a gap having a first gap width is formed between the diaphragm and the lower electrode, wherein the diaphragm comprises one of a first epitaxial layer or a first polysilicon layer. In addition, a stress reducing material is disposed in the first epitaxial layer.
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Yongli Huang, S. Sanli Ergun, Haeggstrom, Mohammed H. Badi, and B.T. Khuri-Yakub; Fabricating Capacitive Micormachined Ultrasonic Transducers with Wafer-Bonding Technology, Apr. 2003.
Fortin Jeffrey Bernard
Logan John Robert
Mills David Martin
Smith Lowell Scott
Tian Wei-Cheng
General Electric Company
Wilczewski M.
Yoder Fletcher
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