Capacitive memory signal doubler cell

Details Capacitive memory signal doubler cell Capacitive memory signal doubler cell

1983-09-29

1986-07-01

Popek, Joseph A.

Static information storage and retrieval

Systems using particular element

Capacitors

365205, G11C 1124

Patent

active

045983879

ABSTRACT:
A plurality of capacitive memory elements are coupled between two pairs of bit line and return line halves. A cross-coupled MOSFET sense amplifier, configured to operate in a race mode, connects between the two bit line/return line pairs. The return line of each bit line/return line pair is coupled to the bit line of the other pair so that when any selected memory element is read to generate a data signal on the bit line half associated with that memory element, the complement of that data signal is coupled to the other bit line half via the return line to increase the signal level differential across the sense amplifier.

REFERENCES:
patent: 4195357 (1980-03-01), Kuo et al.
patent: 4413330 (1983-11-01), Chao et al.

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