Capacitive memory having a PN junction writing and tunneling thr

Details Capacitive memory having a PN junction writing and tunneling thr Capacitive memory having a PN junction writing and tunneling thr

1992-08-19

1994-10-11

LaRoche, Eugene R.

Static information storage and retrieval

Systems using particular element

Capacitors

365185, 257 68, 257 71, 257296, G11C 1124

Patent

active

053553306

ABSTRACT:
A semiconductor memory device whose data hold condition is not affected due to degradation of transistor characteristics by minimizing leakage charges and the switching transistor size. The semiconductor memory device employs memory cell charge holding electrode that is insulated from the remaining memory cell structure, particularly the switching transistor source drain leakage path. The write element controls the tunneling of charge carriers through such insulator to the charge holding portion or capacitor electrode, for writing data. Particularly, the write element includes a PN junction for various advantages.

REFERENCES:
patent: 4161039 (1979-07-01), Rossler
patent: 4698787 (1987-09-01), Mukherjee et al.
patent: 4799193 (1989-01-01), Horiguchi et al.
S. M. Sze; Physics of Semiconductor Devices, Second Edition, "Nonvolatile Memory Devices", pp. 496-505; 1985; John Wiley & Sons N.Y..

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