Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-06-11
2000-09-26
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257296, 257308, H01L 27108, H01L 2976, H01L 2994
Patent
active
061246077
ABSTRACT:
A method and apparatus for enhanced capacitance per unit area electrodes is utilized in semiconductor memory devices. The capacitance is enhanced by roughening the surface of the bottom electrode in such devices. In one embodiment of the invention, surface roughness is achieved on a polysilicon bottom capacitor electrode by depositing doped polysilicon on the outside surfaces of a bottom capacitor electrode and vacuum annealing. In another embodiment of the invention, surface roughness is achieved by depositing a GeO.sub.2 -embedded GeBPSG layer on a substrate, annealing, selectively etching to remove GeO.sub.2, forming a container, and depositing a blanket rough polysilicon layer over the GeBPSG layer to replicate the underlying surface roughness.
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Sandhu Gurtej Singh
Thakur Randhir P. S.
Loke Steven H.
Micro)n Technology, Inc.
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