Capacitive element, semiconductor device, and method of...

Details Capacitive element, semiconductor device, and method of... Capacitive element, semiconductor device, and method of...

2005-06-29

2009-02-17

Dang, Phuc T (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S306000, C438S396000

Reexamination Certificate

active

07491996

ABSTRACT:
A capacitive element includes a base member10, an underlying insulating film11formed on the base member10, a capacitor Q constructed by forming a lower electrode13, a capacitor dielectric film14, and an upper electrode15sequentially on the underlying insulating film11, a lower protection insulating film16aformed on the upper electrode15to cover at least a part of the capacitor Q, and an upper protection insulating film16bformed on the lower protection insulating film16aand having a wider energy band gap than the lower protection insulating film16a.

REFERENCES:
patent: 5691220 (1997-11-01), Ohnishi et al.
patent: 6673672 (2004-01-01), Sashida
patent: 6806553 (2004-10-01), Yashima et al.
patent: 2005/0094452 (2005-05-01), Lee et al.
patent: 0 920 054 (1999-06-01), None
patent: 2003-45748 (2003-02-01), None
patent: WO 98/01904 (1998-01-01), None

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