Capacitive element and method of manufacturing the same

Details Capacitive element and method of manufacturing the same Capacitive element and method of manufacturing the same

2007-01-09

2007-01-09

Dang, Phuc T. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S003000, C438S257000

Reexamination Certificate

active

11014810

ABSTRACT:
A capacitive element which includes: a silicon substrate (base material)1; a base insulating film2formed on the silicon substrate1; and a capacitor Q constituted by forming a bottom electrode4a, a capacitor dielectric film5aand a top electrode6aon the base insulating film2. The capacitive element is characterized in that the capacitor dielectric film5ais composed of a material with the formula (Ba1−y,Sry)mYpTiQO3+δ, where 0<p/(p+m+Q)≦0.015, −0.5<δ<0.5.

REFERENCES:
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patent: 2681214 (1997-08-01), None
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patent: 2878986 (1999-01-01), None
patent: 11-233305 (1999-08-01), None
patent: 2002-537627 (2002-11-01), None

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