Capacitive dynamic quantity sensor and semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation

Reexamination Certificate

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Details

C257S254000, C257S595000, C257S600000, C257S602000, C257S700000

Reexamination Certificate

active

11099163

ABSTRACT:
A capacitive dynamic quantity sensor whose size is small and whose reliability and mass productivity are high is provided. In order to realize signal transmission from a lower electrode to an upper electrode, silicon columns which are electrically isolated from one another but not mechanically isolated from one another are formed to connect both electrodes.

REFERENCES:
patent: 5296730 (1994-03-01), Takano et al.
patent: 6215318 (2001-04-01), Schoefthaler et al.

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