Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal – Physical deformation
Reexamination Certificate
2005-01-11
2005-01-11
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
Physical deformation
C257S414000, C257S415000
Reexamination Certificate
active
06841840
ABSTRACT:
A capacitive dynamic quantity sensor includes a substrate, a weight, a movable electrode, an anchor, a fixed electrode, a spring, and a strain buffer. The weight is displaced by a dynamic quantity. The movable electrode is integrated with the weight. The anchor is fixed to the substrate to suspend the weight and the movable electrode above the substrate. The fixed electrode is arranged to face the movable electrode. The displacement of the movable electrode caused in response to the dynamic quantity is detected as a capacitance variation between the electrodes. The spring is located between the anchor and the weight and resiliently deforms in response to the dynamic quantity such that the movable electrode is displaced by a distance corresponding to the dynamic quantity. The strain buffer is located between the anchor and the spring to reduce the influence of a strain generated in the substrate on the spring.
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Denso Corporation
Nadav Ori
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