Capacitive discharge method for writing to non-volatile memory

Details Capacitive discharge method for writing to non-volatile memory Capacitive discharge method for writing to non-volatile memory

2008-12-19

2011-11-15

Nguyen, Viet (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000, C365S158000, C365S204000, C365S193000

Reexamination Certificate

active

08059447

ABSTRACT:
A memory system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of memory cells with reversible resistance-switching elements, and circuits for limiting the SET current for the reversible resistance-switching elements. The circuits for limiting the SET current provide a charge on one or more bit lines that is not sufficient to SET the memory cells, and then discharge the bit lines through the memory cells in order to SET the memory cells.

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