Capacitance probe for thin dielectric film characterization

Details Capacitance probe for thin dielectric film characterization Capacitance probe for thin dielectric film characterization

2006-02-21

2006-02-21

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

C438S017000

Reexamination Certificate

active

07001785

ABSTRACT:
A capacitance probe for thin dielectric film characterization provides a highly sensitive capacitance measurement method and reduces the contact area needed to obtain such a measurement. Preferably, the capacitance probe is connected to a measurement system by a transmission line and comprises a center conductive tip and RLC components between the center conductor and the ground of the transmission line. When the probe tip is in contact with a sample, an MIS or MIM structure is formed, with the RLC components and the capacitance of the MIS or MIM structure forming a resonant circuit. By sending a driving signal to the probe and measuring the reflected signal from the probe through the transmission line, the resonant characteristic of the resonant circuit can be obtained. The capacitance of the MIS or MIM structure is obtainable from the resonant characteristics and the dielectric film thickness or other dielectric properties are also extractable.

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