Capacitance measurement circuit

Electricity: measuring and testing – Impedance – admittance or other quantities representative of... – Lumped type parameters

Reexamination Certificate

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C324S679000, C324S663000

Reexamination Certificate

active

10760449

ABSTRACT:
A CBCM circuit is capable of separately measuring each component of a measuring target capacitance. A node (N1) is electrically connected to a terminal (P2) between the drains of PMOS and NMOS transistors (MP2, MN2). As a target capacitance forming part, a coupling capacitance (Cc) is formed between the node (N1) and a node (N2). The node (N2) is connected to a pad (58) through the terminal (P2) and an NMOS transistor (MN3), and a node (N3) is connected to a terminal (P3) between the drains of PMOS and NMOS transistors (MP1, MN1). A reference capacitance (Cref) is formed at the node (N3) as a dummy capacitance. Currents (Ir, It) supplied from a power source to the nodes (N3, N1) are measured with current meters (61, 62), respectively and a current (Im) induced from the node (N2) and flowing to a ground level is measured with a current meter (63).

REFERENCES:
patent: 5999010 (1999-12-01), Arora et al.
patent: 6300765 (2001-10-01), Chen
patent: 6366098 (2002-04-01), Froment
patent: 6404222 (2002-06-01), Fan et al.
patent: 6414498 (2002-07-01), Chen
patent: 6597191 (2003-07-01), Oosawa et al.
patent: 6624651 (2003-09-01), Fried et al.
patent: 6870387 (2005-03-01), Huang et al.
patent: 6934669 (2005-08-01), Suaya et al.
Jai-Hoon Sim, et al., 1998 Symposium on VLSI Technology Digest of Technical Papers, pp. 32-33, “The Impact of Isolation Pitch Scaling on VthFluctuation in DRAM Cell Transistors Due to Neighboring Drain/Source Electric Field Penetration,” Jun. 9-11, 1998.
James C. Chen, et al., Technical Digest of IEDM, pp. 69-72, “An On-Chip, Attofarad Interconnect Charge-Based Capacitance Measurement (CBCM) Technique,” 1996.
K. Yamada, et al., 2003 Symposium on VLSI Technology Digest of Technical Papers, pp. 111-112, “Accurate Modeling Method for Deep Sub-Micron Cu Interconnect,” Jun. 10-12, 2003/Kyoto.
U.S. Appl. No. 10/355,068, filed Jan. 31, 2003, Yamashita et al.
U.S. Appl. No. 10/232,689, filed Sep. 3, 2002, Kunikiyo et al.
U.S. Appl. No. 10/287,537, filed Nov. 5, 2002, Okagaki et al.
U.S. Appl. No. 10/760,449, filed Jan. 21, 2004, Kunikiyo et al.

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