Capacitance dielectric layer and capacitor

Details Capacitance dielectric layer and capacitor Capacitance dielectric layer and capacitor

2011-01-18

2011-01-18

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S310000, C257S637000, C257S640000, C257SE29343

Reexamination Certificate

active

07872292

ABSTRACT:
A capacitance dielectric layer is provided. The capacitance dielectric layer includes a first dielectric layer, a second dielectric layer and a silicon nitride stacked layer. The silicon nitride stacked layer is disposed between the first dielectric layer and the second dielectric layer. The structure of the capacitance dielectric layer permits an increase in the capacitance per unit area by decreasing the thickness of the capacitance dielectric layer and eliminates the problems of having a raised leakage current and a diminished breakdown voltage.

REFERENCES:
patent: 5498890 (1996-03-01), Kim et al.
patent: 6163050 (2000-12-01), Hisatomi et al.
patent: 6200852 (2001-03-01), Lou et al.
patent: 6680500 (2004-01-01), Low et al.
patent: 2004/0141390 (2004-07-01), Won et al.
patent: 418529 (2001-01-01), None

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