Cap wafer, semiconductor chip having the same, and...

Details Cap wafer, semiconductor chip having the same, and... Cap wafer, semiconductor chip having the same, and...

2007-01-24

2009-12-01

Parekh, Nitin (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257S774000, C257SE23181

Reexamination Certificate

active

07626258

ABSTRACT:
A cap wafer, fabrication method, and a semiconductor chip are provided. The cap wafer includes a cap wafer substrate; a penetrated electrode formed to penetrate the cap wafer substrate; and an electrode pad connected with a lower portion of the penetrated electrode on a lower surface of the cap wafer substrate, wherein the penetrated electrode has an oblique section which gradually widens from an upper surface to the lower surface of the cap wafer substrate. The fabrication method includes forming an oblique-via hole on a lower surface of a cap wafer substrate, the oblique-via hole having an oblique section which gradually narrows in a direction moving away from the lower surface of the cap wafer substrate; and forming a penetrated electrode in the oblique-via hole. The semiconductor chip includes a base wafer; a cap wafer; a cavity; a penetrated electrode; and a pad bonding layer.

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patent: 2006/0170110 (2006-08-01), Akram et al.
patent: 2006/0192281 (2006-08-01), Lu et al.

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