Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-11-10
2009-02-17
Smith, Bradley K (Department: 2894)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
Reexamination Certificate
active
07491632
ABSTRACT:
A method of fabricating a buried subcollector in which the buried subcollector is implanted to a depth in which during subsequent epi growth the buried subcollector remains substantially below the fictitious interface between the epi layer and the substrate is provided. In particular, the inventive method forms a buried subcollector having an upper surface (i.e., junction) that is located at a depth from about 3000 Å or greater from the upper surface of the semiconductor substrate. This deep buried subcollector having an upper surface that is located at a depth from about 3000 Å or greater from the upper surface of the substrate is formed using a reduced implant energy (as compared to a standard deep implanted subcollector process) at a relative high dose. The present invention also provides a semiconductor structure including the inventive buried subcollector which can be used as cathode for passive devices in high frequency applications.
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Konaka, S., “A Study of High Cut-off Frequency (ft) and High Collector Current Characteristics for Super Self-aligned Bipolar Transistor (SST) With a New Deep SIC (Selectively Ion-implanted Collector) Region”Transactions of the Institute of Electronics, Information and communication Engineers C. Inst. Electron. Inf. & Commun.(May 2001) pp. 428-429, vol. J84-C(5), English-language abstract only.
Coolbaugh Douglas D.
Liu Xuefeng
Rassel Robert M.
Sheridan David C.
International Business Machines - Corporation
Kotulak, Esq. Richard
Scully , Scott, Murphy & Presser, P.C.
Smith Bradley K
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