Cantilevered microtip manufacturing by ion implantation and etch

Details Cantilevered microtip manufacturing by ion implantation and etch Cantilevered microtip manufacturing by ion implantation and etch

1990-01-22

1991-06-25

Chaudhuri, Olik

Metal treatment

Barrier layer stock material, p-n type

With non-semiconductive coating thereon

156653, 156657, 437 20, 437981, H01L 21266, H01L 21306

Patent

active

050264370

ABSTRACT:
A method for fabricating a microtip, cantilevered from a base and having a controllably high aspect ratio, for use in microprobe microscopy to probe variations in materials at the atomic level. A two-layer semiconductor material structure is provided, one layer being n type and the other layer being p type. A thin pencil of ions of n type is implanted through the n type layer into the p type layer, through a small aperture in a mask layer that overlies the n type layer. The p type material is then etched away, leaving the n type ion profile and the n type layer as a cantilevered microtip. The n type semiconductor layer may be replaced by a layer of any material that resists etching by the selected etchant.

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