Cantilever sensor and fabrication method thereof

Details Cantilever sensor and fabrication method thereof Cantilever sensor and fabrication method thereof

2006-04-04

2006-04-04

Gurley, Lynne A. (Department: 2812)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

C438S052000, C438S459000

Reexamination Certificate

active

07022540

ABSTRACT:
In a cantilever sensor and a fabrication thereof, by forming piezoelectric films on the same surface, it is possible to sense various information by an electric measuring method. The cantilever sensor comprises a first silicon nitride film formed onto the top surface of a silicon substrate; a silicon oxide film formed onto the first silicon nitride film; a lower electrode formed onto the silicon oxide film; a first piezoelectric film and a second piezoelectric film formed onto the lower electrode, the second piezoelectric film formed out of contact with the first piezoelectric film; an upper electrode respectively formed onto the first and second piezoelectric films; a protecting film formed onto the silicon oxide film, the lower electrode, the first and second piezoelectric films and the upper electrode; a first and a second openings respectively formed on the protecting film on the upper electrode and the protecting film on the lower electrode; a first and a second contact pads respectively formed at the first and second openings; a T-shaped sensing portion formed at the end of a cantilever; a second silicon nitride film formed on the bottom surface of the silicon substrate.

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patent: 2002/0020053 (2002-02-01), Fonash et al.

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