Cantilever microstructure and fabrication method thereof

Etching a substrate: processes – Etching of semiconductor material to produce an article...

Reexamination Certificate

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C216S041000, C216S079000, C438S717000, C438S719000

Reexamination Certificate

active

10936892

ABSTRACT:
In the present invention, disclosed are a cantilever microstructure and a fabrication thereof comprising a base plate; a cantilever beam extended from one surface of the base plate to outside so that a part thereof can be suspended, and formed of a silicon nitride material, and a probing tip formed at a front end of one surface of the cantilever beam, whereby the thickness of the cantilever beam becomes uniform and the mechanical and electrical characteristic thereof are improved.

REFERENCES:
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 5066358 (1991-11-01), Quate et al.
patent: 5399232 (1995-03-01), Albrecht et al.
patent: 6066265 (2000-05-01), Galvin et al.
patent: 6227519 (2001-05-01), Yagi et al.
patent: 6328902 (2001-12-01), Hantschel et al.

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