Etching a substrate: processes – Etching of semiconductor material to produce an article...
Reexamination Certificate
2007-02-27
2007-02-27
Ahmed, Shamim (Department: 1765)
Etching a substrate: processes
Etching of semiconductor material to produce an article...
C216S041000, C216S079000, C438S717000, C438S719000
Reexamination Certificate
active
10936892
ABSTRACT:
In the present invention, disclosed are a cantilever microstructure and a fabrication thereof comprising a base plate; a cantilever beam extended from one surface of the base plate to outside so that a part thereof can be suspended, and formed of a silicon nitride material, and a probing tip formed at a front end of one surface of the cantilever beam, whereby the thickness of the cantilever beam becomes uniform and the mechanical and electrical characteristic thereof are improved.
REFERENCES:
patent: 4968585 (1990-11-01), Albrecht et al.
patent: 5066358 (1991-11-01), Quate et al.
patent: 5399232 (1995-03-01), Albrecht et al.
patent: 6066265 (2000-05-01), Galvin et al.
patent: 6227519 (2001-05-01), Yagi et al.
patent: 6328902 (2001-12-01), Hantschel et al.
Ahmed Shamim
Lee Hong Degerman Kang & Schmadeka
LG Electronics Inc.
LandOfFree
Cantilever microstructure and fabrication method thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Cantilever microstructure and fabrication method thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Cantilever microstructure and fabrication method thereof will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3855599