Camera device and method of manufacturing the same

Details Camera device and method of manufacturing the same Camera device and method of manufacturing the same

1993-06-16

1995-03-21

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is selenium or tellurium in elemental form

257 53, 257 63, H01L 2918, H01L 2714, H01L 3100

Patent

active

053998820

ABSTRACT:
A camera device having favorable multiplication characteristics (quantum efficiency) as well as improved sensitivity in a visible light region (especially the region on the red side) and a method of manufacturing the same are provided. The camera device includes a hole injection stop layer, a first photoelectric converting layer including selenium, a second photoelectric converting layer having spectral sensitivity characteristics which are different from those of the first photoelectric converting layer, a third photoelectric converting layer including selenium, and an electron injection stop layer. As a result, it is possible to improve multiplication characteristics (quantum efficiency) and to improve the sensitivity in the visible light region (especially the region on the red side) simultaneously.

REFERENCES:
patent: 4445131 (1984-04-01), Nonaka et al.
IEEE Electron Device Letters, vol. EDL-8, No. 9, Sep. 1987, p. 392.
Electro Chemistry and Industrial Physical Chemistry, vol. 56, 1988 p. 516.
Proceedings of National Conference of the Institute of Television Engineers of Japan, 1989, p. 41.
IEEE International Solid-State Circuit Conference, 1990, pp. 212 and 213.
Proceedings of National Conference of the Institute of Television Engineers of Japan 2-8, 1987, pp. 31-32.
ITEJ Technical Report, vol. 12, No. 50, pp. 37-42 (1988).

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