Semiconductor device manufacturing: process – With measuring or testing – Electrical characteristic sensed
Reexamination Certificate
2006-05-23
2006-05-23
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
With measuring or testing
Electrical characteristic sensed
C438S034000, C438S036000, C257S048000
Reexamination Certificate
active
07049157
ABSTRACT:
A critical dimension control wafer for calibrating process control scanning electron microscopes is described. The test wafer provides one or more test structures each consisting of an array of parallel trenches precision micro-machined in a metal plate. The trenches are formed, preferably in an aluminum/copper alloy plate, using focused ion beam milling. The micro-machined trenches have lower width roughness and lower edge roughness compared to similar patterns form in polysilicon by conventional photo lithographic methods. In addition, electron charging in the scanning electron microscope, which produces distorted images, is essentially eliminated. The dimensions of the trenches and the metal lines between them have dimensions comparable to those of polysilicon lines used in sub-tenth micron integrated circuit process technology control wafer. The control wafers are calibrated using a calibrated laboratory grade scanning electron microscope. Once calibrated, the control wafers may be stock-piled for subsequent routine use as a high precision dimensional reference, in particular for calibrating and monitoring the stability of process line scanning electron microscopes.
REFERENCES:
patent: 3988564 (1976-10-01), Garvin et al.
patent: 4457803 (1984-07-01), Takigawa
patent: 5504340 (1996-04-01), Mizumura et al.
patent: 5616921 (1997-04-01), Talbot et al.
patent: 5683547 (1997-11-01), Azuma et al.
patent: 5945677 (1999-08-01), Leung et al.
patent: 6514866 (2003-02-01), Russell et al.
patent: 6528818 (2003-03-01), Satya et al.
patent: 6538844 (2003-03-01), Takano et al.
patent: 2003/0049938 (2003-03-01), Lai et al.
patent: 2004/0121531 (2004-06-01), Wieczorek et al.
patent: 2004/0201858 (2004-10-01), Broermann et al.
patent: 2005/0148104 (2005-07-01), Kota et al.
Lu Yu-Hui
Wu Tien-Chi
Ahmadi Mohsen
Lebentritt Michael
Thomas Kayden Horstemeyer & Risley
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